Electric-field-controlled interface dipole modulation for Si-based memory devices
Abstract Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologi...
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| Formato: | article |
| Lenguaje: | EN |
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Nature Portfolio
2018
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| Acceso en línea: | https://doaj.org/article/d418fb7703f649cdb06f092aed18129a |
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