Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interesti...

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Main Authors: Yael Gutiérrez, Maria M. Giangregorio, Stefano Dicorato, Fabio Palumbo, Maria Losurdo
Format: article
Language:EN
Published: Frontiers Media S.A. 2021
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Online Access:https://doaj.org/article/d458514e943f4be5a71e9da3bcb979c0
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spelling oai:doaj.org-article:d458514e943f4be5a71e9da3bcb979c02021-11-19T07:52:11ZExploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide2296-264610.3389/fchem.2021.781467https://doaj.org/article/d458514e943f4be5a71e9da3bcb979c02021-11-01T00:00:00Zhttps://www.frontiersin.org/articles/10.3389/fchem.2021.781467/fullhttps://doaj.org/toc/2296-2646Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interestingly, when going to the few-layer regime, changes in the electronic structure occur, resulting in a change in the properties of the material. Therefore, a systematic study on the thickness dependence of the different properties of GaS is needed. Here, we analyze mechanically exfoliated GaS layers transferred to glass substrates. Specifically, we report the dependence of the Raman spectra, photoluminescence, optical transmittance, resistivity, and work function on the thickness of GaS. Those findings can be used as guidance in designing devices based on GaS.Yael GutiérrezMaria M. GiangregorioStefano DicoratoFabio PalumboMaria LosurdoFrontiers Media S.A.articlelayered GaSchalcogenideswork functionoptical propertiesphotoresistivityChemistryQD1-999ENFrontiers in Chemistry, Vol 9 (2021)
institution DOAJ
collection DOAJ
language EN
topic layered GaS
chalcogenides
work function
optical properties
photoresistivity
Chemistry
QD1-999
spellingShingle layered GaS
chalcogenides
work function
optical properties
photoresistivity
Chemistry
QD1-999
Yael Gutiérrez
Maria M. Giangregorio
Stefano Dicorato
Fabio Palumbo
Maria Losurdo
Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
description Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interestingly, when going to the few-layer regime, changes in the electronic structure occur, resulting in a change in the properties of the material. Therefore, a systematic study on the thickness dependence of the different properties of GaS is needed. Here, we analyze mechanically exfoliated GaS layers transferred to glass substrates. Specifically, we report the dependence of the Raman spectra, photoluminescence, optical transmittance, resistivity, and work function on the thickness of GaS. Those findings can be used as guidance in designing devices based on GaS.
format article
author Yael Gutiérrez
Maria M. Giangregorio
Stefano Dicorato
Fabio Palumbo
Maria Losurdo
author_facet Yael Gutiérrez
Maria M. Giangregorio
Stefano Dicorato
Fabio Palumbo
Maria Losurdo
author_sort Yael Gutiérrez
title Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
title_short Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
title_full Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
title_fullStr Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
title_full_unstemmed Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
title_sort exploring the thickness-dependence of the properties of layered gallium sulfide
publisher Frontiers Media S.A.
publishDate 2021
url https://doaj.org/article/d458514e943f4be5a71e9da3bcb979c0
work_keys_str_mv AT yaelgutierrez exploringthethicknessdependenceofthepropertiesoflayeredgalliumsulfide
AT mariamgiangregorio exploringthethicknessdependenceofthepropertiesoflayeredgalliumsulfide
AT stefanodicorato exploringthethicknessdependenceofthepropertiesoflayeredgalliumsulfide
AT fabiopalumbo exploringthethicknessdependenceofthepropertiesoflayeredgalliumsulfide
AT marialosurdo exploringthethicknessdependenceofthepropertiesoflayeredgalliumsulfide
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