Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide
Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interesti...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
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Frontiers Media S.A.
2021
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| Accès en ligne: | https://doaj.org/article/d458514e943f4be5a71e9da3bcb979c0 |
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