Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

Abstract Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the o...

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Autores principales: H. Fujiwara, R. Y. Umetsu, F. Kuroda, J. Miyawaki, T. Kashiuchi, K. Nishimoto, K. Nagai, A. Sekiyama, A. Irizawa, Y. Takeda, Y. Saitoh, T. Oguchi, Y. Harada, S. Suga
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/d4e51d0747f44c4cbf723064e474b5ea
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