Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

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Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

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Détails bibliographiques
Auteurs principaux:	Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2021
Sujets:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Accès en ligne:	https://doaj.org/article/d5cf3313bcad4fcf9509a27e8b2909b3
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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