1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on wh...

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Autores principales: Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
Materias:
AlGaN/GaN
HEMT
reverse blocking
ultralow turn-on voltage
hybrid Schottky-ohmic drain with tungsten
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/d5d30875a37f4ee5912e703ee162c60c
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https://doaj.org/article/d5d30875a37f4ee5912e703ee162c60c

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