1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on wh...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Haiyong Wang, Wei Mao, Shenglei Zhao, Ming Du, Yachao Zhang, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	AlGaN/GaN HEMT reverse blocking ultralow turn-on voltage hybrid Schottky-ohmic drain with tungsten Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/d5d30875a37f4ee5912e703ee162c60c
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:d5d30875a37f4ee5912e703ee162c60c
record_format	dspace
spelling	oai:doaj.org-article:d5d30875a37f4ee5912e703ee162c60c2021-11-19T00:01:44Z1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V2168-673410.1109/JEDS.2020.3042264https://doaj.org/article/d5d30875a37f4ee5912e703ee162c60c2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9279331/https://doaj.org/toc/2168-6734A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on which the state-of-the-art ultralow turn-on voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ on}}$ </tex-math></inline-formula>) of 0.25 V could be realized without degradation in on-state characteristics. In addition, the fabricated RB-MISHEMT exhibits the excellent reverse blocking voltage of −1332 V (at <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ GS}}= 0$ </tex-math></inline-formula> V) and forward blocking voltage of 1315 V (at <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ GS}} = -15$ </tex-math></inline-formula> V) with a specific on-resistance (<inline-formula> <tex-math notation="LaTeX">${R} _{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of 3.5 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula>cm<sup>2</sup>, leading in the highest power figure-of-merit (FOM) of > 494 MW/cm<sup>2</sup>. The good thermal stability could also be observed in fabricated RB-MISHEMT. The corresponding operation mechanism of RB-MISHEMT are also revealed by Silvaco ATLAS simulations. These results demonstrate the great potential in power electronics applications.Haiyong WangWei MaoShenglei ZhaoMing DuYachao ZhangXuefeng ZhengChong WangChunfu ZhangJincheng ZhangYue HaoIEEEarticleAlGaN/GaNHEMTreverse blockingultralow turn-on voltagehybrid Schottky-ohmic drain with tungstenElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 125-129 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlGaN/GaN HEMT reverse blocking ultralow turn-on voltage hybrid Schottky-ohmic drain with tungsten Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	AlGaN/GaN HEMT reverse blocking ultralow turn-on voltage hybrid Schottky-ohmic drain with tungsten Electrical engineering. Electronics. Nuclear engineering TK1-9971 Haiyong Wang Wei Mao Shenglei Zhao Ming Du Yachao Zhang Xuefeng Zheng Chong Wang Chunfu Zhang Jincheng Zhang Yue Hao 1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
description	A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on which the state-of-the-art ultralow turn-on voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ on}}$ </tex-math></inline-formula>) of 0.25 V could be realized without degradation in on-state characteristics. In addition, the fabricated RB-MISHEMT exhibits the excellent reverse blocking voltage of −1332 V (at <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ GS}}= 0$ </tex-math></inline-formula> V) and forward blocking voltage of 1315 V (at <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ GS}} = -15$ </tex-math></inline-formula> V) with a specific on-resistance (<inline-formula> <tex-math notation="LaTeX">${R} _{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of 3.5 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula>cm<sup>2</sup>, leading in the highest power figure-of-merit (FOM) of > 494 MW/cm<sup>2</sup>. The good thermal stability could also be observed in fabricated RB-MISHEMT. The corresponding operation mechanism of RB-MISHEMT are also revealed by Silvaco ATLAS simulations. These results demonstrate the great potential in power electronics applications.
format	article
author	Haiyong Wang Wei Mao Shenglei Zhao Ming Du Yachao Zhang Xuefeng Zheng Chong Wang Chunfu Zhang Jincheng Zhang Yue Hao
author_facet	Haiyong Wang Wei Mao Shenglei Zhao Ming Du Yachao Zhang Xuefeng Zheng Chong Wang Chunfu Zhang Jincheng Zhang Yue Hao
author_sort	Haiyong Wang
title	1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
title_short	1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
title_full	1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
title_fullStr	1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
title_full_unstemmed	1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
title_sort	1.3 kv reverse-blocking algan/gan mishemt with ultralow turn-on voltage 0.25 v
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/d5d30875a37f4ee5912e703ee162c60c
work_keys_str_mv	AT haiyongwang 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT weimao 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT shengleizhao 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT mingdu 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT yachaozhang 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT xuefengzheng 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT chongwang 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT chunfuzhang 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT jinchengzhang 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v AT yuehao 13kvreverseblockingalganganmishemtwithultralowturnonvoltage025v
_version_	1718420697422757888

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Ejemplares similares