1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V
A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on wh...
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| Main Authors: | , , , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/d5d30875a37f4ee5912e703ee162c60c |
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