Lasing in strained germanium microbridges

Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.

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Detalles Bibliográficos
Autores principales: F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/d5eb7b334da04a17bdb97efaf5799180
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