Lasing in strained germanium microbridges

Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.

Guardado en:
Detalles Bibliográficos
Autores principales: F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Q
Acceso en línea:https://doaj.org/article/d5eb7b334da04a17bdb97efaf5799180
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:d5eb7b334da04a17bdb97efaf5799180
record_format dspace
spelling oai:doaj.org-article:d5eb7b334da04a17bdb97efaf57991802021-12-02T17:32:40ZLasing in strained germanium microbridges10.1038/s41467-019-10655-62041-1723https://doaj.org/article/d5eb7b334da04a17bdb97efaf57991802019-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10655-6https://doaj.org/toc/2041-1723Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.F. T. Armand PilonA. LyasotaY.-M. NiquetV. ReboudV. CalvoN. PaucJ. WidiezC. BonzonJ. M. HartmannA. ChelnokovJ. FaistH. SiggNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
F. T. Armand Pilon
A. Lyasota
Y.-M. Niquet
V. Reboud
V. Calvo
N. Pauc
J. Widiez
C. Bonzon
J. M. Hartmann
A. Chelnokov
J. Faist
H. Sigg
Lasing in strained germanium microbridges
description Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.
format article
author F. T. Armand Pilon
A. Lyasota
Y.-M. Niquet
V. Reboud
V. Calvo
N. Pauc
J. Widiez
C. Bonzon
J. M. Hartmann
A. Chelnokov
J. Faist
H. Sigg
author_facet F. T. Armand Pilon
A. Lyasota
Y.-M. Niquet
V. Reboud
V. Calvo
N. Pauc
J. Widiez
C. Bonzon
J. M. Hartmann
A. Chelnokov
J. Faist
H. Sigg
author_sort F. T. Armand Pilon
title Lasing in strained germanium microbridges
title_short Lasing in strained germanium microbridges
title_full Lasing in strained germanium microbridges
title_fullStr Lasing in strained germanium microbridges
title_full_unstemmed Lasing in strained germanium microbridges
title_sort lasing in strained germanium microbridges
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/d5eb7b334da04a17bdb97efaf5799180
work_keys_str_mv AT ftarmandpilon lasinginstrainedgermaniummicrobridges
AT alyasota lasinginstrainedgermaniummicrobridges
AT ymniquet lasinginstrainedgermaniummicrobridges
AT vreboud lasinginstrainedgermaniummicrobridges
AT vcalvo lasinginstrainedgermaniummicrobridges
AT npauc lasinginstrainedgermaniummicrobridges
AT jwidiez lasinginstrainedgermaniummicrobridges
AT cbonzon lasinginstrainedgermaniummicrobridges
AT jmhartmann lasinginstrainedgermaniummicrobridges
AT achelnokov lasinginstrainedgermaniummicrobridges
AT jfaist lasinginstrainedgermaniummicrobridges
AT hsigg lasinginstrainedgermaniummicrobridges
_version_ 1718380277858828288