Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers

Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers

A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-...

Full description

Saved in:
Bibliographic Details
Main Authors: Soeun Jin, Jung-Dae Kwon, Yonghun Kim
Format: article
Language:EN
Published: MDPI AG 2021
Subjects:
memristor
conductive bridge random-access memory (CBRAM)
molybdenum disulfide (MoS<sub>2</sub>)
non-volatile resistive memory
AP-PECVD
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Online Access:https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40

Similar Items