Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers

Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers

A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-...

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Détails bibliographiques
Auteurs principaux: Soeun Jin, Jung-Dae Kwon, Yonghun Kim
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
memristor
conductive bridge random-access memory (CBRAM)
molybdenum disulfide (MoS<sub>2</sub>)
non-volatile resistive memory
AP-PECVD
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Accès en ligne:https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40
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https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40

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