Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40 |
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| Sumario: | A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta<sub>2</sub>O<sub>5</sub>-based memristor devices, where a 2D-MoS<sub>2</sub> buffer layer was directly inserted between the Ta<sub>2</sub>O<sub>5</sub> switching layer and the Ag metal electrode to improve uniform switching characteristics in terms of switching voltage, the distribution of resistance states, endurance, and retention. A 2D-MoS<sub>2</sub> layered buffer film with a 5 nm thickness was directly grown on the Ta<sub>2</sub>O<sub>5</sub> switching layer by the atomic-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) method, which is highly uniform and provided a superior yield of 2D-MoS<sub>2</sub> film. It was observed that the switching operation was dramatically stabilized via the introduction of the 2D-MoS<sub>2</sub> buffer layer compared to a pristine device without the buffer layer. It was assumed that the difference in mobility and reduction rates between Ta<sub>2</sub>O<sub>5</sub> and MoS<sub>2</sub> caused the narrow localization of ion migration, inducing the formation of more stable conduction filament. In addition, an excellent yield of 98% was confirmed while showing cell-to-cell operation uniformity, and the extrinsic and intrinsic variabilities in operating the device were highly uniform. Thus, the introduction of a MoS<sub>2</sub> buffer layer could improve highly reliable memristor device switching operation. |
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