Statistical Analysis of Uniform Switching Characteristics of Ta2O5-Based Memristors by Embedding In-Situ Grown 2D-MoS2 Buffer Layers

A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-...

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Autores principales:	Soeun Jin, Jung-Dae Kwon, Yonghun Kim
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	memristor conductive bridge random-access memory (CBRAM) molybdenum disulfide (MoS<sub>2</sub>) non-volatile resistive memory AP-PECVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40
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spelling	oai:doaj.org-article:d927006b115d4186b6b66bde0dbb8b402021-11-11T17:51:14ZStatistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers10.3390/ma142162751996-1944https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b402021-10-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/21/6275https://doaj.org/toc/1996-1944A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta<sub>2</sub>O<sub>5</sub>-based memristor devices, where a 2D-MoS<sub>2</sub> buffer layer was directly inserted between the Ta<sub>2</sub>O<sub>5</sub> switching layer and the Ag metal electrode to improve uniform switching characteristics in terms of switching voltage, the distribution of resistance states, endurance, and retention. A 2D-MoS<sub>2</sub> layered buffer film with a 5 nm thickness was directly grown on the Ta<sub>2</sub>O<sub>5</sub> switching layer by the atomic-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) method, which is highly uniform and provided a superior yield of 2D-MoS<sub>2</sub> film. It was observed that the switching operation was dramatically stabilized via the introduction of the 2D-MoS<sub>2</sub> buffer layer compared to a pristine device without the buffer layer. It was assumed that the difference in mobility and reduction rates between Ta<sub>2</sub>O<sub>5</sub> and MoS<sub>2</sub> caused the narrow localization of ion migration, inducing the formation of more stable conduction filament. In addition, an excellent yield of 98% was confirmed while showing cell-to-cell operation uniformity, and the extrinsic and intrinsic variabilities in operating the device were highly uniform. Thus, the introduction of a MoS<sub>2</sub> buffer layer could improve highly reliable memristor device switching operation.Soeun JinJung-Dae KwonYonghun KimMDPI AGarticlememristorconductive bridge random-access memory (CBRAM)molybdenum disulfide (MoS<sub>2</sub>)non-volatile resistive memoryAP-PECVDTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6275, p 6275 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	memristor conductive bridge random-access memory (CBRAM) molybdenum disulfide (MoS<sub>2</sub>) non-volatile resistive memory AP-PECVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	memristor conductive bridge random-access memory (CBRAM) molybdenum disulfide (MoS<sub>2</sub>) non-volatile resistive memory AP-PECVD Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Soeun Jin Jung-Dae Kwon Yonghun Kim Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
description	A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta<sub>2</sub>O<sub>5</sub>-based memristor devices, where a 2D-MoS<sub>2</sub> buffer layer was directly inserted between the Ta<sub>2</sub>O<sub>5</sub> switching layer and the Ag metal electrode to improve uniform switching characteristics in terms of switching voltage, the distribution of resistance states, endurance, and retention. A 2D-MoS<sub>2</sub> layered buffer film with a 5 nm thickness was directly grown on the Ta<sub>2</sub>O<sub>5</sub> switching layer by the atomic-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) method, which is highly uniform and provided a superior yield of 2D-MoS<sub>2</sub> film. It was observed that the switching operation was dramatically stabilized via the introduction of the 2D-MoS<sub>2</sub> buffer layer compared to a pristine device without the buffer layer. It was assumed that the difference in mobility and reduction rates between Ta<sub>2</sub>O<sub>5</sub> and MoS<sub>2</sub> caused the narrow localization of ion migration, inducing the formation of more stable conduction filament. In addition, an excellent yield of 98% was confirmed while showing cell-to-cell operation uniformity, and the extrinsic and intrinsic variabilities in operating the device were highly uniform. Thus, the introduction of a MoS<sub>2</sub> buffer layer could improve highly reliable memristor device switching operation.
format	article
author	Soeun Jin Jung-Dae Kwon Yonghun Kim
author_facet	Soeun Jin Jung-Dae Kwon Yonghun Kim
author_sort	Soeun Jin
title	Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
title_short	Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
title_full	Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
title_fullStr	Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
title_full_unstemmed	Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
title_sort	statistical analysis of uniform switching characteristics of ta<sub>2</sub>o<sub>5</sub>-based memristors by embedding in-situ grown 2d-mos<sub>2</sub> buffer layers
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40
work_keys_str_mv	AT soeunjin statisticalanalysisofuniformswitchingcharacteristicsoftasub2subosub5subbasedmemristorsbyembeddinginsitugrown2dmossub2subbufferlayers AT jungdaekwon statisticalanalysisofuniformswitchingcharacteristicsoftasub2subosub5subbasedmemristorsbyembeddinginsitugrown2dmossub2subbufferlayers AT yonghunkim statisticalanalysisofuniformswitchingcharacteristicsoftasub2subosub5subbasedmemristorsbyembeddinginsitugrown2dmossub2subbufferlayers
_version_	1718432029281878016

Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers

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