Statistical Analysis of Uniform Switching Characteristics of Ta<sub>2</sub>O<sub>5</sub>-Based Memristors by Embedding In-Situ Grown 2D-MoS<sub>2</sub> Buffer Layers
A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
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MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d927006b115d4186b6b66bde0dbb8b40 |
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