Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Abstract This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications....

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Autores principales:	Ho-Kun Sung, Tian Qiang, Zhao Yao, Yang Li, Qun Wu, Hee-Kwan Lee, Bum-Doo Park, Woong-Sun Lim, Kyung-Ho Park, Cong Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d927454a0fe643499f1d954875a15f80
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spelling	oai:doaj.org-article:d927454a0fe643499f1d954875a15f802021-12-02T16:08:07ZVertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications10.1038/s41598-017-04389-y2045-2322https://doaj.org/article/d927454a0fe643499f1d954875a15f802017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04389-yhttps://doaj.org/toc/2045-2322Abstract This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF6 with additive O2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl3 + N2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl2 + O2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl2 and 3.6 sccm O2. These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs’ bevel mesa, and avalanche photodiode fabrication.Ho-Kun SungTian QiangZhao YaoYang LiQun WuHee-Kwan LeeBum-Doo ParkWoong-Sun LimKyung-Ho ParkCong WangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ho-Kun Sung Tian Qiang Zhao Yao Yang Li Qun Wu Hee-Kwan Lee Bum-Doo Park Woong-Sun Lim Kyung-Ho Park Cong Wang Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
description	Abstract This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF6 with additive O2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl3 + N2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl2 + O2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl2 and 3.6 sccm O2. These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs’ bevel mesa, and avalanche photodiode fabrication.
format	article
author	Ho-Kun Sung Tian Qiang Zhao Yao Yang Li Qun Wu Hee-Kwan Lee Bum-Doo Park Woong-Sun Lim Kyung-Ho Park Cong Wang
author_facet	Ho-Kun Sung Tian Qiang Zhao Yao Yang Li Qun Wu Hee-Kwan Lee Bum-Doo Park Woong-Sun Lim Kyung-Ho Park Cong Wang
author_sort	Ho-Kun Sung
title	Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
title_short	Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
title_full	Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
title_fullStr	Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
title_full_unstemmed	Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
title_sort	vertical and bevel-structured sic etching techniques incorporating different gas mixture plasmas for various microelectronic applications
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d927454a0fe643499f1d954875a15f80
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Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

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