Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
Abstract This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications....
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2017
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/d927454a0fe643499f1d954875a15f80 |
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