Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2

Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not...

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Autores principales: Zuocheng Li, Xingxu Yan, Zhenkun Tang, Ziyang Huo, Guoliang Li, Liying Jiao, Li-Min Liu, Miao Zhang, Jun Luo, Jing Zhu
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/dae1a19d15474b04a2ab513d95e1f4ad
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spelling oai:doaj.org-article:dae1a19d15474b04a2ab513d95e1f4ad2021-12-02T15:04:56ZDirect observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS210.1038/s41598-017-07615-92045-2322https://doaj.org/article/dae1a19d15474b04a2ab513d95e1f4ad2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07615-9https://doaj.org/toc/2045-2322Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS2. First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion.Zuocheng LiXingxu YanZhenkun TangZiyang HuoGuoliang LiLiying JiaoLi-Min LiuMiao ZhangJun LuoJing ZhuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Zuocheng Li
Xingxu Yan
Zhenkun Tang
Ziyang Huo
Guoliang Li
Liying Jiao
Li-Min Liu
Miao Zhang
Jun Luo
Jing Zhu
Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
description Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS2. First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion.
format article
author Zuocheng Li
Xingxu Yan
Zhenkun Tang
Ziyang Huo
Guoliang Li
Liying Jiao
Li-Min Liu
Miao Zhang
Jun Luo
Jing Zhu
author_facet Zuocheng Li
Xingxu Yan
Zhenkun Tang
Ziyang Huo
Guoliang Li
Liying Jiao
Li-Min Liu
Miao Zhang
Jun Luo
Jing Zhu
author_sort Zuocheng Li
title Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
title_short Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
title_full Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
title_fullStr Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
title_full_unstemmed Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
title_sort direct observation of multiple rotational stacking faults coexisting in freestanding bilayer mos2
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/dae1a19d15474b04a2ab513d95e1f4ad
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