Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not...
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2017
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oai:doaj.org-article:dae1a19d15474b04a2ab513d95e1f4ad2021-12-02T15:04:56ZDirect observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS210.1038/s41598-017-07615-92045-2322https://doaj.org/article/dae1a19d15474b04a2ab513d95e1f4ad2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07615-9https://doaj.org/toc/2045-2322Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS2. First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion.Zuocheng LiXingxu YanZhenkun TangZiyang HuoGuoliang LiLiying JiaoLi-Min LiuMiao ZhangJun LuoJing ZhuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017) |
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Medicine R Science Q Zuocheng Li Xingxu Yan Zhenkun Tang Ziyang Huo Guoliang Li Liying Jiao Li-Min Liu Miao Zhang Jun Luo Jing Zhu Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2 |
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Abstract Electronic properties of two-dimensional (2D) MoS2 semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not directly observed in freestanding 2D MoS2 before. In this report, we demonstrate the coexistence of three RSFs with three different rotational angles in a freestanding bilayer MoS2 sheet as directly observed using an aberration-corrected transmission electron microscope (TEM). Our analyses show that these RSFs originate from cracks and dislocations within the bilayer MoS2. First-principles calculations indicate that RSFs with different rotational angles change the electronic structures of bilayer MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums. Therefore, employing RSFs and their coexistence is a promising route in defect engineering of MoS2 to fabricate suitable devices for electronics, optoelectronics, and energy conversion. |
format |
article |
author |
Zuocheng Li Xingxu Yan Zhenkun Tang Ziyang Huo Guoliang Li Liying Jiao Li-Min Liu Miao Zhang Jun Luo Jing Zhu |
author_facet |
Zuocheng Li Xingxu Yan Zhenkun Tang Ziyang Huo Guoliang Li Liying Jiao Li-Min Liu Miao Zhang Jun Luo Jing Zhu |
author_sort |
Zuocheng Li |
title |
Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2 |
title_short |
Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2 |
title_full |
Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2 |
title_fullStr |
Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2 |
title_full_unstemmed |
Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2 |
title_sort |
direct observation of multiple rotational stacking faults coexisting in freestanding bilayer mos2 |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/dae1a19d15474b04a2ab513d95e1f4ad |
work_keys_str_mv |
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1718388987102494720 |