Gallium oxide nanowires for UV detection with enhanced growth and material properties
Abstract In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires ex...
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| Main Authors: | , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2020
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| Subjects: | |
| Online Access: | https://doaj.org/article/dbe8d3e9650e4b95b1857b6eef848506 |
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