Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably involves the formation of contacts with metallic electrodes. As these contacts can dramatically affect the behavior of the device, we study the electronic properties of monolayer Janus MoSSe in contact...
Saved in:
Main Authors: | Ning Zhao, Udo Schwingenschlögl |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2021
|
Subjects: | |
Online Access: | https://doaj.org/article/de6d4ecc2f1d4c6780f9efadf79eca33 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
by: Qianqian Wang, et al.
Published: (2021) -
Origins of genuine Ohmic van der Waals contact between indium and MoS2
by: Bum-Kyu Kim, et al.
Published: (2021) -
Evolution of defect formation during atomically precise desulfurization of monolayer MoS2
by: Jong-Young Lee, et al.
Published: (2021) -
Enhancing ductility in bulk metallic glasses by straining during cooling
by: Rodrigo Miguel Ojeda Mota, et al.
Published: (2021) -
Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
by: A. George, et al.
Published: (2021)