An SRAM Compiler for Monolithic-3-D Integrated Circuit With Carbon Nanotube Transistors
This article presents monolithic-3-D (M3D) SRAM arrays using multiple tiers of carbon nanotube (CNT) transistors. The compiler automatically generates single-tier 2-D SRAM subarrays and multitier 3-D SRAM subarrays with different tiers for cells and peripheral logic. Moreover, the compiler can integ...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/df1b2c62224146cda435cc567414f305 |
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| Sumario: | This article presents monolithic-3-D (M3D) SRAM arrays using multiple tiers of carbon nanotube (CNT) transistors. The compiler automatically generates single-tier 2-D SRAM subarrays and multitier 3-D SRAM subarrays with different tiers for cells and peripheral logic. Moreover, the compiler can integrate multiple subarrays of different dimensions to generate larger capacity SRAM arrays. The compiler is demonstrated in a commercial-grade M3D process design kit (PDK) with two tiers of carbon nanotube transistors (CNFETs). Simulations show that the M3D CNT SRAM design can improve the properties of memory compared to the 2-D CNT SRAM design. In a 32-kB memory implementation, the M3D design can reduce footprint, latency, and energy by 33%, 10%, and 19%, respectively. The compiler is used to show the feasibility of fine-grain logic and SRAM stacking in M3D technology. |
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