Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au–AlN SBD features a low ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math&g...
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e09472d1c1f04b05af3b537c7db7e331 |
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