Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au–AlN SBD features a low ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math&g...

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Autores principales:	Qin Zhou, Honglei Wu, Hui Li, Xi Tang, Zuoyan Qin, Dan Dong, Yan Lin, Chengjin Lu, Ran Qiu, Ruisheng Zheng, Jiannong Wang, Baikui Li
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	AlN non-polar Schottky barrier diode inhomogeneity thermionic emission physical vapor transport Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/e09472d1c1f04b05af3b537c7db7e331
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spelling	oai:doaj.org-article:e09472d1c1f04b05af3b537c7db7e3312021-11-19T00:01:16ZBarrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport2168-673410.1109/JEDS.2019.2923204https://doaj.org/article/e09472d1c1f04b05af3b537c7db7e3312019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8737747/https://doaj.org/toc/2168-6734An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au–AlN SBD features a low ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> decreases and the effective SBH increases at high temperatures. The temperature dependences of <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni–AlN Schottky junction from the inhomogeneity analysis of the current–voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the current–voltage characteristics of inhomogeneous SBDs.Qin ZhouHonglei WuHui LiXi TangZuoyan QinDan DongYan LinChengjin LuRan QiuRuisheng ZhengJiannong WangBaikui LiIEEEarticleAlNnon-polarSchottky barrier diodeinhomogeneitythermionic emissionphysical vapor transportElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 662-667 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlN non-polar Schottky barrier diode inhomogeneity thermionic emission physical vapor transport Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	AlN non-polar Schottky barrier diode inhomogeneity thermionic emission physical vapor transport Electrical engineering. Electronics. Nuclear engineering TK1-9971 Qin Zhou Honglei Wu Hui Li Xi Tang Zuoyan Qin Dan Dong Yan Lin Chengjin Lu Ran Qiu Ruisheng Zheng Jiannong Wang Baikui Li Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
description	An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au–AlN SBD features a low ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> decreases and the effective SBH increases at high temperatures. The temperature dependences of <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni–AlN Schottky junction from the inhomogeneity analysis of the current–voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the current–voltage characteristics of inhomogeneous SBDs.
format	article
author	Qin Zhou Honglei Wu Hui Li Xi Tang Zuoyan Qin Dan Dong Yan Lin Chengjin Lu Ran Qiu Ruisheng Zheng Jiannong Wang Baikui Li
author_facet	Qin Zhou Honglei Wu Hui Li Xi Tang Zuoyan Qin Dan Dong Yan Lin Chengjin Lu Ran Qiu Ruisheng Zheng Jiannong Wang Baikui Li
author_sort	Qin Zhou
title	Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
title_short	Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
title_full	Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
title_fullStr	Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
title_full_unstemmed	Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
title_sort	barrier inhomogeneity of schottky diode on nonpolar aln grown by physical vapor transport
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/e09472d1c1f04b05af3b537c7db7e331
work_keys_str_mv	AT qinzhou barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT hongleiwu barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT huili barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT xitang barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT zuoyanqin barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT dandong barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT yanlin barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT chengjinlu barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT ranqiu barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT ruishengzheng barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT jiannongwang barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport AT baikuili barrierinhomogeneityofschottkydiodeonnonpolaralngrownbyphysicalvaportransport
_version_	1718420700281176064

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

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