High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier,...

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Autores principales: Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
Materias:
GaSb
III-V
ultra-thin-body (UTB)
InGaAs passivation
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
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https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5

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