High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier,...
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5 |
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| Sumario: | In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In<sub>0.53</sub>Ga<sub>0.47</sub>As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility (<inline-formula> <tex-math notation="LaTeX">${\mu }_{\mathrm{ eff}}$ </tex-math></inline-formula>) characteristics. As a result, the fabricated devices showed the lowest off-leakage current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ off}}$ </tex-math></inline-formula>), subthreshold slope (<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.) and high <inline-formula> <tex-math notation="LaTeX">$\mu _{\mathrm{ eff}}$ </tex-math></inline-formula> among reported GaSb p-MOSFETs. |
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