High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier,...

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Autores principales:	Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	GaSb III-V ultra-thin-body (UTB) InGaAs passivation Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
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spelling	oai:doaj.org-article:e14f70b92ca14adebb389839bfcd79c52021-11-19T00:01:50ZHigh Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb2168-673410.1109/JEDS.2020.3039370https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c52021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9264257/https://doaj.org/toc/2168-6734In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In<sub>0.53</sub>Ga<sub>0.47</sub>As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility (<inline-formula> <tex-math notation="LaTeX">${\mu }_{\mathrm{ eff}}$ </tex-math></inline-formula>) characteristics. As a result, the fabricated devices showed the lowest off-leakage current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ off}}$ </tex-math></inline-formula>), subthreshold slope (<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.) and high <inline-formula> <tex-math notation="LaTeX">$\mu _{\mathrm{ eff}}$ </tex-math></inline-formula> among reported GaSb p-MOSFETs.Sang-Hyeon KimIlpyo RohJae-Hoon HanDae-Myeong GeumSeong Kwang KimSoo Seok KangHang-Kyu KangWoo Chul LeeSeong Keun KimDo Kyung HwangYun Heub SongJin Dong SongIEEEarticleGaSbIII-Vultra-thin-body (UTB)InGaAs passivationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaSb III-V ultra-thin-body (UTB) InGaAs passivation Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	GaSb III-V ultra-thin-body (UTB) InGaAs passivation Electrical engineering. Electronics. Nuclear engineering TK1-9971 Sang-Hyeon Kim Ilpyo Roh Jae-Hoon Han Dae-Myeong Geum Seong Kwang Kim Soo Seok Kang Hang-Kyu Kang Woo Chul Lee Seong Keun Kim Do Kyung Hwang Yun Heub Song Jin Dong Song High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
description	In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In<sub>0.53</sub>Ga<sub>0.47</sub>As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility (<inline-formula> <tex-math notation="LaTeX">${\mu }_{\mathrm{ eff}}$ </tex-math></inline-formula>) characteristics. As a result, the fabricated devices showed the lowest off-leakage current (<inline-formula> <tex-math notation="LaTeX">${I} _{\mathrm{ off}}$ </tex-math></inline-formula>), subthreshold slope (<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>.) and high <inline-formula> <tex-math notation="LaTeX">$\mu _{\mathrm{ eff}}$ </tex-math></inline-formula> among reported GaSb p-MOSFETs.
format	article
author	Sang-Hyeon Kim Ilpyo Roh Jae-Hoon Han Dae-Myeong Geum Seong Kwang Kim Soo Seok Kang Hang-Kyu Kang Woo Chul Lee Seong Keun Kim Do Kyung Hwang Yun Heub Song Jin Dong Song
author_facet	Sang-Hyeon Kim Ilpyo Roh Jae-Hoon Han Dae-Myeong Geum Seong Kwang Kim Soo Seok Kang Hang-Kyu Kang Woo Chul Lee Seong Keun Kim Do Kyung Hwang Yun Heub Song Jin Dong Song
author_sort	Sang-Hyeon Kim
title	High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
title_short	High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
title_full	High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
title_fullStr	High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
title_full_unstemmed	High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
title_sort	high hole mobility and low leakage thin-body (in)gasb p-mosfets grown on high-bandgap algasb
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
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High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

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