High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al<sub>0.95</sub>Ga<sub>0.0</sub><sub>5</sub>Sb barrier,...
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5 |
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