High Hole Mobility Polycrystalline GaSb Thin Films

High Hole Mobility Polycrystalline GaSb Thin Films

In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on <i>p</i><sup>+</sup> Si/SiO<sub>2</sub> by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-i...

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Auteurs principaux: Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
polycrystalline
amorphous
low temperature
thin films
high mobility
Crystallography
QD901-999
Accès en ligne:https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
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Internet

https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050

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