High Hole Mobility Polycrystalline GaSb Thin Films
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on <i>p</i><sup>+</sup> Si/SiO<sub>2</sub> by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-i...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050 |
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