High Hole Mobility Polycrystalline GaSb Thin Films
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on <i>p</i><sup>+</sup> Si/SiO<sub>2</sub> by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-i...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050 |
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| Sumario: | In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on <i>p</i><sup>+</sup> Si/SiO<sub>2</sub> by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is <i>p</i>-type, with a hole concentration in the range of 2 × 10<sup>16</sup> to 2 × 10<sup>17</sup> cm<sup>−3</sup>. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO<sub>2</sub> in the range of 9–66 cm<sup>2</sup>/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm<sup>2</sup>/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO<sub>2</sub> has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO<sub>2</sub> displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in <i>p</i>-channel devices than for implementation in ICs. |
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