High Hole Mobility Polycrystalline GaSb Thin Films

In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-i...

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Autores principales:	Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	polycrystalline amorphous low temperature thin films high mobility Crystallography QD901-999
Acceso en línea:	https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
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spelling	oai:doaj.org-article:e1a788fbc76d4c60a486dfc8daf770502021-11-25T17:18:36ZHigh Hole Mobility Polycrystalline GaSb Thin Films10.3390/cryst111113482073-4352https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf770502021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1348https://doaj.org/toc/2073-4352In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on <i>p</i><sup>+</sup> Si/SiO<sub>2</sub> by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is <i>p</i>-type, with a hole concentration in the range of 2 × 10<sup>16</sup> to 2 × 10<sup>17</sup> cm<sup>−3</sup>. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO<sub>2</sub> in the range of 9–66 cm<sup>2</sup>/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm<sup>2</sup>/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO<sub>2</sub> has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO<sub>2</sub> displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in <i>p</i>-channel devices than for implementation in ICs.Anya CurranFarzan GityAgnieszka GocalinskaEnrica MuraRoger E. NagleMichael SchmidtBrendan SheehanEmanuele PelucchiColm O’DwyerPaul K. HurleyMDPI AGarticlepolycrystallineamorphouslow temperaturethin filmshigh mobilityCrystallographyQD901-999ENCrystals, Vol 11, Iss 1348, p 1348 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	polycrystalline amorphous low temperature thin films high mobility Crystallography QD901-999
spellingShingle	polycrystalline amorphous low temperature thin films high mobility Crystallography QD901-999 Anya Curran Farzan Gity Agnieszka Gocalinska Enrica Mura Roger E. Nagle Michael Schmidt Brendan Sheehan Emanuele Pelucchi Colm O’Dwyer Paul K. Hurley High Hole Mobility Polycrystalline GaSb Thin Films
description	In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on <i>p</i><sup>+</sup> Si/SiO<sub>2</sub> by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating GaAs substrates are included as comparative samples. In all cases, the unintentionally doped GaSb is <i>p</i>-type, with a hole concentration in the range of 2 × 10<sup>16</sup> to 2 × 10<sup>17</sup> cm<sup>−3</sup>. Exceptional hole mobilities are measured for polycrystalline GaSb on SiO<sub>2</sub> in the range of 9–66 cm<sup>2</sup>/Vs, exceeding the reported values for many other semiconductors grown at low temperatures. A mobility of 9.1 cm<sup>2</sup>/Vs is recorded for an amorphous GaSb layer in a poly-GaAs/amorphous GaSb heterostructure. Mechanisms limiting the mobility in the GaSb thin films are investigated. It is found that for the GaSb grown directly on GaAs, the mobility is phonon-limited, while the GaSb deposited directly on SiO<sub>2</sub> has a Coulomb scattering limited mobility, and the poly-GaAs/amorphous GaSb heterostructure on SiO<sub>2</sub> displays a mobility which is consistent with variable-range-hopping. GaSb films grown at low temperatures demonstrate a far greater potential for implementation in <i>p</i>-channel devices than for implementation in ICs.
format	article
author	Anya Curran Farzan Gity Agnieszka Gocalinska Enrica Mura Roger E. Nagle Michael Schmidt Brendan Sheehan Emanuele Pelucchi Colm O’Dwyer Paul K. Hurley
author_facet	Anya Curran Farzan Gity Agnieszka Gocalinska Enrica Mura Roger E. Nagle Michael Schmidt Brendan Sheehan Emanuele Pelucchi Colm O’Dwyer Paul K. Hurley
author_sort	Anya Curran
title	High Hole Mobility Polycrystalline GaSb Thin Films
title_short	High Hole Mobility Polycrystalline GaSb Thin Films
title_full	High Hole Mobility Polycrystalline GaSb Thin Films
title_fullStr	High Hole Mobility Polycrystalline GaSb Thin Films
title_full_unstemmed	High Hole Mobility Polycrystalline GaSb Thin Films
title_sort	high hole mobility polycrystalline gasb thin films
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
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High Hole Mobility Polycrystalline GaSb Thin Films

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