New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” a...
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/e266cd25741d4587bc3ae4700eac4ef1 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|