New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” a...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e266cd25741d4587bc3ae4700eac4ef1 |
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| Sumario: | A new technological approach to production of structurally perfect epitaxial films LPE-
grown on “soft” porous n
-InP substrates is considered. We studied surface morphology,
boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky
diodes made on “soft” and “rigid” (standard) n
-InP substrates. The advantages of epitaxial
layers grown on porous n
-InP substrates and barrier structures on their basis are
demonstrated |
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