New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” a...

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Main Author:	Rusu, Emil
Format:	article
Language:	EN
Published:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Subjects:	Physics QC1-999 Electronics TK7800-8360
Online Access:	https://doaj.org/article/e266cd25741d4587bc3ae4700eac4ef1
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spelling	oai:doaj.org-article:e266cd25741d4587bc3ae4700eac4ef12021-11-21T12:11:36ZNew manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis 2537-63651810-648Xhttps://doaj.org/article/e266cd25741d4587bc3ae4700eac4ef12005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3379https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated Rusu, EmilD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 481-484 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Rusu, Emil New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
description	A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated
format	article
author	Rusu, Emil
author_facet	Rusu, Emil
author_sort	Rusu, Emil
title	New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
title_short	New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
title_full	New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
title_fullStr	New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
title_full_unstemmed	New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
title_sort	new manufacturing technology for inp epitaxial layers and properties of schottky diodes made on their basis
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/e266cd25741d4587bc3ae4700eac4ef1
work_keys_str_mv	AT rusuemil newmanufacturingtechnologyforinpepitaxiallayersandpropertiesofschottkydiodesmadeontheirbasis
_version_	1718419156930396160

New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

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