New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” a...
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| Format: | article |
| Language: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Online Access: | https://doaj.org/article/e266cd25741d4587bc3ae4700eac4ef1 |
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