Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.

Guardado en:
Detalles Bibliográficos
Autores principales: Seungho Cho, Chao Yun, Stefan Tappertzhofen, Ahmed Kursumovic, Shinbuhm Lee, Ping Lu, Quanxi Jia, Meng Fan, Jie Jian, Haiyan Wang, Stephan Hofmann, Judith L. MacManus-Driscoll
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/e2ad2398bc014812b50b9081bad28e2d
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!