Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.

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Autores principales:	Seungho Cho, Chao Yun, Stefan Tappertzhofen, Ahmed Kursumovic, Shinbuhm Lee, Ping Lu, Quanxi Jia, Meng Fan, Jie Jian, Haiyan Wang, Stephan Hofmann, Judith L. MacManus-Driscoll
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/e2ad2398bc014812b50b9081bad28e2d
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spelling	oai:doaj.org-article:e2ad2398bc014812b50b9081bad28e2d2021-12-02T15:35:26ZSelf-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching10.1038/ncomms123732041-1723https://doaj.org/article/e2ad2398bc014812b50b9081bad28e2d2016-08-01T00:00:00Zhttps://doi.org/10.1038/ncomms12373https://doaj.org/toc/2041-1723Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.Seungho ChoChao YunStefan TappertzhofenAhmed KursumovicShinbuhm LeePing LuQuanxi JiaMeng FanJie JianHaiyan WangStephan HofmannJudith L. MacManus-DriscollNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-10 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Seungho Cho Chao Yun Stefan Tappertzhofen Ahmed Kursumovic Shinbuhm Lee Ping Lu Quanxi Jia Meng Fan Jie Jian Haiyan Wang Stephan Hofmann Judith L. MacManus-Driscoll Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
description	Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.
format	article
author	Seungho Cho Chao Yun Stefan Tappertzhofen Ahmed Kursumovic Shinbuhm Lee Ping Lu Quanxi Jia Meng Fan Jie Jian Haiyan Wang Stephan Hofmann Judith L. MacManus-Driscoll
author_facet	Seungho Cho Chao Yun Stefan Tappertzhofen Ahmed Kursumovic Shinbuhm Lee Ping Lu Quanxi Jia Meng Fan Jie Jian Haiyan Wang Stephan Hofmann Judith L. MacManus-Driscoll
author_sort	Seungho Cho
title	Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_short	Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_full	Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_fullStr	Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_full_unstemmed	Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
title_sort	self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/e2ad2398bc014812b50b9081bad28e2d
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Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

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