Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Metal oxide resistive switches rely on the migration of oxygen vacancies and electrons under applied voltage. Here, Cho et al. use nanocomposites to control the electronic and ionic conductivities in spatially distinct channels, and fabricate memristors with high on/off ratios and reproducibility.

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Detalles Bibliográficos
Autores principales: Seungho Cho, Chao Yun, Stefan Tappertzhofen, Ahmed Kursumovic, Shinbuhm Lee, Ping Lu, Quanxi Jia, Meng Fan, Jie Jian, Haiyan Wang, Stephan Hofmann, Judith L. MacManus-Driscoll
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
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Acceso en línea:https://doaj.org/article/e2ad2398bc014812b50b9081bad28e2d
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