A gate-free monolayer WSe2 pn diode

A gate-free monolayer WSe2 pn diode

Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.

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Autores principales: Jhih-Wei Chen, Shun-Tsung Lo, Sheng-Chin Ho, Sheng-Shong Wong, Thi-Hai-Yen Vu, Xin-Quan Zhang, Yi-De Liu, Yu-You Chiou, Yu-Xun Chen, Jan-Chi Yang, Yi-Chun Chen, Ying-Hao Chu, Yi-Hsien Lee, Chung-Jen Chung, Tse-Ming Chen, Chia-Hao Chen, Chung-Lin Wu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Science
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Acceso en línea:https://doaj.org/article/e41776571763424b93505d2150065c4d
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https://doaj.org/article/e41776571763424b93505d2150065c4d

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