Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the p...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/e4f333fec4944a6bbd02b40314194748 |
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