Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the p...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e4f333fec4944a6bbd02b40314194748 |
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| Sumario: | We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the post-metallization annealing (PMA) at 400°C/5 min for HfN<sub>0.5</sub>/HfN<sub>1.15</sub>/Si(100) MFS diode structure which was deposited with in situ process by the electron cyclotron resonance (ECR) plasma reactive sputtering. The remnant polarization (2P<sub>r</sub>) of <inline-formula> <tex-math notation="LaTeX">$24.0 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> with the coercive field (<inline-formula> <tex-math notation="LaTeX">${\text{E}_{c}}$ </tex-math></inline-formula>) of 3.8 MV/cm was obtained from the P-V characteristic under the voltage sweep of ±10 V. Fatigue characteristics without wake-up were confirmed until 10<sup>9</sup> program/erase (P/E) cycles under the input pulses of ±6 V/<inline-formula> <tex-math notation="LaTeX">$5 \mu \text{s}$ </tex-math></inline-formula> although the 2<inline-formula> <tex-math notation="LaTeX">${\text {P}_{r}}$ </tex-math></inline-formula> was gradually decreased to <inline-formula> <tex-math notation="LaTeX">$10.7 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup>. The polarization (P<sub>sw</sub>) of <inline-formula> <tex-math notation="LaTeX">$13.4 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> was clearly observed by the positive-up negative-down (PUND) measurements utilizing the input pulses of ±6 V/<inline-formula> <tex-math notation="LaTeX">$5 \mu \text{s}$ </tex-math></inline-formula>. The memory window (MW) of 0.32 V was realized in the C-V characteristics by the program operation at −10 V/1 s. |
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