Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the p...

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Autores principales:	S. Ohmi, Y. Ohtaguchi, A. Ihara, H. Morita
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Hafnium nitride ferroelectrics rhombohedral phase MFS diode ECR plasma reactive sputtering Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/e4f333fec4944a6bbd02b40314194748
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spelling	oai:doaj.org-article:e4f333fec4944a6bbd02b403141947482021-11-10T00:00:27ZFerroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate2168-673410.1109/JEDS.2021.3123438https://doaj.org/article/e4f333fec4944a6bbd02b403141947482021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9590540/https://doaj.org/toc/2168-6734We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the post-metallization annealing (PMA) at 400°C/5 min for HfN<sub>0.5</sub>/HfN<sub>1.15</sub>/Si(100) MFS diode structure which was deposited with in situ process by the electron cyclotron resonance (ECR) plasma reactive sputtering. The remnant polarization (2P<sub>r</sub>) of <inline-formula> <tex-math notation="LaTeX">$24.0 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> with the coercive field (<inline-formula> <tex-math notation="LaTeX">${\text{E}_{c}}$ </tex-math></inline-formula>) of 3.8 MV/cm was obtained from the P-V characteristic under the voltage sweep of ±10 V. Fatigue characteristics without wake-up were confirmed until 10<sup>9</sup> program/erase (P/E) cycles under the input pulses of ±6 V/<inline-formula> <tex-math notation="LaTeX">$5 \mu \text{s}$ </tex-math></inline-formula> although the 2<inline-formula> <tex-math notation="LaTeX">${\text {P}_{r}}$ </tex-math></inline-formula> was gradually decreased to <inline-formula> <tex-math notation="LaTeX">$10.7 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup>. The polarization (P<sub>sw</sub>) of <inline-formula> <tex-math notation="LaTeX">$13.4 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> was clearly observed by the positive-up negative-down (PUND) measurements utilizing the input pulses of ±6 V/<inline-formula> <tex-math notation="LaTeX">$5 \mu \text{s}$ </tex-math></inline-formula>. The memory window (MW) of 0.32 V was realized in the C-V characteristics by the program operation at −10 V/1 s.S. OhmiY. OhtaguchiA. IharaH. MoritaIEEEarticleHafnium nitrideferroelectricsrhombohedral phaseMFS diodeECR plasmareactive sputteringElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1036-1040 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Hafnium nitride ferroelectrics rhombohedral phase MFS diode ECR plasma reactive sputtering Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Hafnium nitride ferroelectrics rhombohedral phase MFS diode ECR plasma reactive sputtering Electrical engineering. Electronics. Nuclear engineering TK1-9971 S. Ohmi Y. Ohtaguchi A. Ihara H. Morita Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
description	We have investigated the ferroelectric hafnium nitride (HfN) thin films directly formed on the Si(100) substrate for the metal-ferroelectrics-Si field-effect transistor (MFSFET) applications. The 10 nm thick rhombohedral phase HfN layer was found to be formed on the Si(100) substrate utilizing the post-metallization annealing (PMA) at 400°C/5 min for HfN<sub>0.5</sub>/HfN<sub>1.15</sub>/Si(100) MFS diode structure which was deposited with in situ process by the electron cyclotron resonance (ECR) plasma reactive sputtering. The remnant polarization (2P<sub>r</sub>) of <inline-formula> <tex-math notation="LaTeX">$24.0 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> with the coercive field (<inline-formula> <tex-math notation="LaTeX">${\text{E}_{c}}$ </tex-math></inline-formula>) of 3.8 MV/cm was obtained from the P-V characteristic under the voltage sweep of ±10 V. Fatigue characteristics without wake-up were confirmed until 10<sup>9</sup> program/erase (P/E) cycles under the input pulses of ±6 V/<inline-formula> <tex-math notation="LaTeX">$5 \mu \text{s}$ </tex-math></inline-formula> although the 2<inline-formula> <tex-math notation="LaTeX">${\text {P}_{r}}$ </tex-math></inline-formula> was gradually decreased to <inline-formula> <tex-math notation="LaTeX">$10.7 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup>. The polarization (P<sub>sw</sub>) of <inline-formula> <tex-math notation="LaTeX">$13.4 \mu \text{C}$ </tex-math></inline-formula>/cm<sup>2</sup> was clearly observed by the positive-up negative-down (PUND) measurements utilizing the input pulses of ±6 V/<inline-formula> <tex-math notation="LaTeX">$5 \mu \text{s}$ </tex-math></inline-formula>. The memory window (MW) of 0.32 V was realized in the C-V characteristics by the program operation at −10 V/1 s.
format	article
author	S. Ohmi Y. Ohtaguchi A. Ihara H. Morita
author_facet	S. Ohmi Y. Ohtaguchi A. Ihara H. Morita
author_sort	S. Ohmi
title	Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
title_short	Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
title_full	Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
title_fullStr	Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
title_full_unstemmed	Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate
title_sort	ferroelectric hafnium nitride thin films directly formed on si(100) substrate
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/e4f333fec4944a6bbd02b40314194748
work_keys_str_mv	AT sohmi ferroelectrichafniumnitridethinfilmsdirectlyformedonsi100substrate AT yohtaguchi ferroelectrichafniumnitridethinfilmsdirectlyformedonsi100substrate AT aihara ferroelectrichafniumnitridethinfilmsdirectlyformedonsi100substrate AT hmorita ferroelectrichafniumnitridethinfilmsdirectlyformedonsi100substrate
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Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

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