Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Abstract The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si an...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: S. Dellis, N. Pliatsikas, N. Kalfagiannis, O. Lidor-Shalev, A. Papaderakis, G. Vourlias, S. Sotiropoulos, D. C. Koutsogeorgis, Y. Mastai, P. Patsalas
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
R
Q
Acceso en línea:https://doaj.org/article/e5418f0c12aa4b64b21d041885a50075
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!