Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Abstract The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si an...

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Autores principales:	S. Dellis, N. Pliatsikas, N. Kalfagiannis, O. Lidor-Shalev, A. Papaderakis, G. Vourlias, S. Sotiropoulos, D. C. Koutsogeorgis, Y. Mastai, P. Patsalas
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e5418f0c12aa4b64b21d041885a50075
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spelling	oai:doaj.org-article:e5418f0c12aa4b64b21d041885a500752021-12-02T16:08:15ZBroadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures10.1038/s41598-018-24684-62045-2322https://doaj.org/article/e5418f0c12aa4b64b21d041885a500752018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-24684-6https://doaj.org/toc/2045-2322Abstract The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.S. DellisN. PliatsikasN. KalfagiannisO. Lidor-ShalevA. PapaderakisG. VourliasS. SotiropoulosD. C. KoutsogeorgisY. MastaiP. PatsalasNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q S. Dellis N. Pliatsikas N. Kalfagiannis O. Lidor-Shalev A. Papaderakis G. Vourlias S. Sotiropoulos D. C. Koutsogeorgis Y. Mastai P. Patsalas Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures
description	Abstract The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.
format	article
author	S. Dellis N. Pliatsikas N. Kalfagiannis O. Lidor-Shalev A. Papaderakis G. Vourlias S. Sotiropoulos D. C. Koutsogeorgis Y. Mastai P. Patsalas
author_facet	S. Dellis N. Pliatsikas N. Kalfagiannis O. Lidor-Shalev A. Papaderakis G. Vourlias S. Sotiropoulos D. C. Koutsogeorgis Y. Mastai P. Patsalas
author_sort	S. Dellis
title	Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures
title_short	Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures
title_full	Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures
title_fullStr	Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures
title_full_unstemmed	Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures
title_sort	broadband luminescence in defect-engineered electrochemically produced porous si/zno nanostructures
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/e5418f0c12aa4b64b21d041885a50075
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Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

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