Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt

The regularities of silicon and aluminum co-deposition on glassy carbon from KF–KCl (2:1)–75 mol % KI–0.15 mol % K2SiF6–(up to 0.15 mol %) AlF3 melts at 998 K were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The cycl...

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Autores principales:	Laptev Michael V., Khudorozhkova Anastasia O., Isakov Andrey V., Grishenkova Olga V., Zhuk Sergey I., Zaikov Yurii P.
Formato:	article
Lenguaje:	EN
Publicado:	Serbian Chemical Society 2021
Materias:	molten salts co-deposition kinetics 3d nucleation/growth. Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/e6d8f3a87c2c41948bc5043d16e8dddf
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id	oai:doaj.org-article:e6d8f3a87c2c41948bc5043d16e8dddf
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spelling	oai:doaj.org-article:e6d8f3a87c2c41948bc5043d16e8dddf2021-11-22T11:03:40ZElectrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt0352-51391820-742110.2298/JSC200917065Lhttps://doaj.org/article/e6d8f3a87c2c41948bc5043d16e8dddf2021-01-01T00:00:00Zhttp://www.doiserbia.nb.rs/img/doi/0352-5139/2021/0352-51392100065L.pdfhttps://doaj.org/toc/0352-5139https://doaj.org/toc/1820-7421The regularities of silicon and aluminum co-deposition on glassy carbon from KF–KCl (2:1)–75 mol % KI–0.15 mol % K2SiF6–(up to 0.15 mol %) AlF3 melts at 998 K were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The cyclic voltammograms demonstrated the presence of only one cathodic peak (or nucleation loop at a low reverse potential) and the corresponding anodic peak. The cathodic peak shifted in the cathodic direction with decreasing concentration of aluminum ions in the melt or with increasing scan rate. The Scharifker–Hills model was used to analyze potentiostatic current density transients and estimate the values of the apparent diffusion coefficient and the number density of nuclei. The morphology and elemental analysis of the samples obtained during potentiostatic and galvanostatic deposition for 30–60 s were studied. Continuous thin silicon films doped with aluminum were obtained under galvanostatic conditions.Laptev Michael V.Khudorozhkova Anastasia O.Isakov Andrey V.Grishenkova Olga V.Zhuk Sergey I.Zaikov Yurii P.Serbian Chemical Society articlemolten saltsco-depositionkinetics3d nucleation/growth.ChemistryQD1-999ENJournal of the Serbian Chemical Society, Vol 86, Iss 11, Pp 1075-1087 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	molten salts co-deposition kinetics 3d nucleation/growth. Chemistry QD1-999
spellingShingle	molten salts co-deposition kinetics 3d nucleation/growth. Chemistry QD1-999 Laptev Michael V. Khudorozhkova Anastasia O. Isakov Andrey V. Grishenkova Olga V. Zhuk Sergey I. Zaikov Yurii P. Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
description	The regularities of silicon and aluminum co-deposition on glassy carbon from KF–KCl (2:1)–75 mol % KI–0.15 mol % K2SiF6–(up to 0.15 mol %) AlF3 melts at 998 K were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The cyclic voltammograms demonstrated the presence of only one cathodic peak (or nucleation loop at a low reverse potential) and the corresponding anodic peak. The cathodic peak shifted in the cathodic direction with decreasing concentration of aluminum ions in the melt or with increasing scan rate. The Scharifker–Hills model was used to analyze potentiostatic current density transients and estimate the values of the apparent diffusion coefficient and the number density of nuclei. The morphology and elemental analysis of the samples obtained during potentiostatic and galvanostatic deposition for 30–60 s were studied. Continuous thin silicon films doped with aluminum were obtained under galvanostatic conditions.
format	article
author	Laptev Michael V. Khudorozhkova Anastasia O. Isakov Andrey V. Grishenkova Olga V. Zhuk Sergey I. Zaikov Yurii P.
author_facet	Laptev Michael V. Khudorozhkova Anastasia O. Isakov Andrey V. Grishenkova Olga V. Zhuk Sergey I. Zaikov Yurii P.
author_sort	Laptev Michael V.
title	Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
title_short	Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
title_full	Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
title_fullStr	Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
title_full_unstemmed	Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
title_sort	electrodeposition of aluminum-doped thin silicon films from a kf-kcl-ki-k2sif6-alf3 melt
publisher	Serbian Chemical Society
publishDate	2021
url	https://doaj.org/article/e6d8f3a87c2c41948bc5043d16e8dddf
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Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt

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