Optimum design for the ballistic diode based on graphene field-effect transistors
Abstract We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal bo...
Saved in:
Main Authors: | Van Huy Nguyen, Dinh Cong Nguyen, Sunil Kumar, Minwook Kim, Dongwoon Kang, Yeonjae Lee, Naila Nasir, Malik Abdul Rehman, Thi Phuong Anh Bach, Jongwan Jung, Yongho Seo |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2021
|
Subjects: | |
Online Access: | https://doaj.org/article/e7310eb6385d4d27bfdb73f0fa6a8b4d |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Through-thickness perforated steel plates optimized for ballistic impact applications
by: Francisco Javier Ramírez-Gil, et al.
Published: (2021) -
Josephson current mediated by ballistic topological states in Bi2Te2.3Se0.7 single nanocrystals
by: Vasily S. Stolyarov, et al.
Published: (2020) -
Extended gate field-effect-transistor for sensing cortisol stress hormone
by: Shokoofeh Sheibani, et al.
Published: (2021) -
On the unipolarity of charge transport in methanofullerene diodes
by: Ardalan Armin, et al.
Published: (2017) -
Understanding degradation of organic light-emitting diodes from magnetic field effects
by: Masaki Tanaka, et al.
Published: (2020)