Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

Abstract Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispersive synchrotron X-ray diffraction and Ram...

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Autores principales: Nhu Quynh Diep, Ssu Kuan Wu, Cheng Wei Liu, Sa Hoang Huynh, Wu Ching Chou, Chih Ming Lin, Dong Zhou Zhang, Ching Hwa Ho
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/e8482ebcdc4441faa49b76323c183062
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