Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

Abstract Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispersive synchrotron X-ray diffraction and Ram...

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Autores principales:	Nhu Quynh Diep, Ssu Kuan Wu, Cheng Wei Liu, Sa Hoang Huynh, Wu Ching Chou, Chih Ming Lin, Dong Zhou Zhang, Ching Hwa Ho
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/e8482ebcdc4441faa49b76323c183062
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spelling	oai:doaj.org-article:e8482ebcdc4441faa49b76323c1830622021-12-02T18:09:03ZPressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery10.1038/s41598-021-99419-12045-2322https://doaj.org/article/e8482ebcdc4441faa49b76323c1830622021-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-99419-1https://doaj.org/toc/2045-2322Abstract Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispersive synchrotron X-ray diffraction and Raman spectroscopy. The early pressure-driven hexagonal-to-rock salt transition at approximately ~ 20 GPa as well as the outstandingly structural-phase memory after depressurization in the SDD-GaSe film was recognized, attributed to the screw dislocation-assisted mechanism. Note that, the reversible pressure-induced structural transition was not evidenced from the GaSe bulk, which has a layer-by-layer stacking structure. In addition, a remarkable 1.7 times higher in bulk modulus of the SDD-GaSe film in comparison to bulk counterpart was observed, which was mainly contributed by its four times higher in the incompressibility along c-axis. This is well-correlated to the slower shifting slopes of out-of-plane phonon-vibration modes in the SDD-GaSe film, especially at low-pressure range (< 5 GPa). As a final point, we recommend that the intense density of screw dislocation cores in the SDD-GaSe lattice structure plays a crucial role in these novel phenomena.Nhu Quynh DiepSsu Kuan WuCheng Wei LiuSa Hoang HuynhWu Ching ChouChih Ming LinDong Zhou ZhangChing Hwa HoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Nhu Quynh Diep Ssu Kuan Wu Cheng Wei Liu Sa Hoang Huynh Wu Ching Chou Chih Ming Lin Dong Zhou Zhang Ching Hwa Ho Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
description	Abstract Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispersive synchrotron X-ray diffraction and Raman spectroscopy. The early pressure-driven hexagonal-to-rock salt transition at approximately ~ 20 GPa as well as the outstandingly structural-phase memory after depressurization in the SDD-GaSe film was recognized, attributed to the screw dislocation-assisted mechanism. Note that, the reversible pressure-induced structural transition was not evidenced from the GaSe bulk, which has a layer-by-layer stacking structure. In addition, a remarkable 1.7 times higher in bulk modulus of the SDD-GaSe film in comparison to bulk counterpart was observed, which was mainly contributed by its four times higher in the incompressibility along c-axis. This is well-correlated to the slower shifting slopes of out-of-plane phonon-vibration modes in the SDD-GaSe film, especially at low-pressure range (< 5 GPa). As a final point, we recommend that the intense density of screw dislocation cores in the SDD-GaSe lattice structure plays a crucial role in these novel phenomena.
format	article
author	Nhu Quynh Diep Ssu Kuan Wu Cheng Wei Liu Sa Hoang Huynh Wu Ching Chou Chih Ming Lin Dong Zhou Zhang Ching Hwa Ho
author_facet	Nhu Quynh Diep Ssu Kuan Wu Cheng Wei Liu Sa Hoang Huynh Wu Ching Chou Chih Ming Lin Dong Zhou Zhang Ching Hwa Ho
author_sort	Nhu Quynh Diep
title	Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
title_short	Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
title_full	Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
title_fullStr	Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
title_full_unstemmed	Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
title_sort	pressure induced structural phase crossover of a gase epilayer grown under screw dislocation driven mode and its phase recovery
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/e8482ebcdc4441faa49b76323c183062
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Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

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