Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
Thermoactivated negative photoconductivity has been observed and investigated in p-GaAs/Al0.5Ga0.5As heterostructures under illumination with the red light in the temperature interval 1.5 – 20 K. Uniaxial compression up to 4.4 kbar was used as an additional parameter changing the energy...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/e9261cfc4f7e4b6ba308ec409882536c |
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