Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface

Thermoactivated negative photoconductivity has been observed and investigated in p-GaAs/Al0.5Ga0.5As heterostructures under illumination with the red light in the temperature interval 1.5 – 20 K. Uniaxial compression up to 4.4 kbar was used as an additional parameter changing the energy...

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Autores principales:	Bogdanov, E., Ilievsky, A., Kraak, W., Minina, N.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/e9261cfc4f7e4b6ba308ec409882536c
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spelling	oai:doaj.org-article:e9261cfc4f7e4b6ba308ec409882536c2021-11-21T12:11:27ZPhotoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface2537-63651810-648Xhttps://doaj.org/article/e9261cfc4f7e4b6ba308ec409882536c2005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3359https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Thermoactivated negative photoconductivity has been observed and investigated in p-GaAs/Al0.5Ga0.5As heterostructures under illumination with the red light in the temperature interval 1.5 – 20 K. Uniaxial compression up to 4.4 kbar was used as an additional parameter changing the energy spectrum of 2D holes. Temperature dependences of the 2D hole concentration and mobility in the thermoactivated photoconductivity state can be described by a model with deep donor like traps in the vicinity of the heterointerface below the Fermi level, if a barrier EB = 6 meV between the ground and excited states is introduced. These traps are supposed to be in the spacer at the distance 7 – 48 nm from the heterointerface. Bogdanov, E.Ilievsky, A.Kraak, W.Minina, N.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 459-463 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Bogdanov, E. Ilievsky, A. Kraak, W. Minina, N. Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
description	Thermoactivated negative photoconductivity has been observed and investigated in p-GaAs/Al0.5Ga0.5As heterostructures under illumination with the red light in the temperature interval 1.5 – 20 K. Uniaxial compression up to 4.4 kbar was used as an additional parameter changing the energy spectrum of 2D holes. Temperature dependences of the 2D hole concentration and mobility in the thermoactivated photoconductivity state can be described by a model with deep donor like traps in the vicinity of the heterointerface below the Fermi level, if a barrier EB = 6 meV between the ground and excited states is introduced. These traps are supposed to be in the spacer at the distance 7 – 48 nm from the heterointerface.
format	article
author	Bogdanov, E. Ilievsky, A. Kraak, W. Minina, N.
author_facet	Bogdanov, E. Ilievsky, A. Kraak, W. Minina, N.
author_sort	Bogdanov, E.
title	Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
title_short	Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
title_full	Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
title_fullStr	Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
title_full_unstemmed	Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface
title_sort	photoconductivity in p-gaas/al0.5ga0.5as and deep donor like states at heterointerface
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/e9261cfc4f7e4b6ba308ec409882536c
work_keys_str_mv	AT bogdanove photoconductivityinpgaasal05ga05asanddeepdonorlikestatesatheterointerface AT ilievskya photoconductivityinpgaasal05ga05asanddeepdonorlikestatesatheterointerface AT kraakw photoconductivityinpgaasal05ga05asanddeepdonorlikestatesatheterointerface AT mininan photoconductivityinpgaasal05ga05asanddeepdonorlikestatesatheterointerface
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Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface

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