Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface

Photoconductivity in p-GaAs/Al0.5Ga0.5As and deep donor like states at heterointerface

Thermoactivated negative photoconductivity has been observed and investigated in p-GaAs/Al0.5Ga0.5As heterostructures under illumination with the red light in the temperature interval 1.5 – 20 K. Uniaxial compression up to 4.4 kbar was used as an additional parameter changing the energy...

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Autores principales: Bogdanov, E., Ilievsky, A., Kraak, W., Minina, N.
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/e9261cfc4f7e4b6ba308ec409882536c
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