Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale

A phase-field-crystal model is used to investigate the processing-structure-protrusion relationship of blind Cu through-silicon vias (TSVs) at the atomic scale. A higher temperature results in a larger TSV protrusion. Deformation via dislocation motion dominates at temperatures lower than around 300...

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Autores principales:	Jinxin Liu, Zhiheng Huang, Paul P. Conway, Yang Liu
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Copper interconnections reliability modeling through-silicon via microstructure Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/e9f3d9c867ef430c93bc5047a31fc0f9
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spelling	oai:doaj.org-article:e9f3d9c867ef430c93bc5047a31fc0f92021-11-19T00:01:20ZProcessing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale2168-673410.1109/JEDS.2019.2947246https://doaj.org/article/e9f3d9c867ef430c93bc5047a31fc0f92019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8869888/https://doaj.org/toc/2168-6734A phase-field-crystal model is used to investigate the processing-structure-protrusion relationship of blind Cu through-silicon vias (TSVs) at the atomic scale. A higher temperature results in a larger TSV protrusion. Deformation via dislocation motion dominates at temperatures lower than around 300°C, while both diffusional and dislocation creep occur at temperatures greater than around 300°C. TSVs with smaller sidewall roughness <inline-formula> <tex-math notation="LaTeX">$R_{a}$ </tex-math></inline-formula> and wavelength <inline-formula> <tex-math notation="LaTeX">$\lambda _{a}$ </tex-math></inline-formula> exhibit larger protrusions. Moreover, different protrusion profiles are observed for TSVs with different grain structures. Both protrusions and intrusions are observed when a single grain is placed near the TSV top end, while the top surface protrudes near both edges when it contains more grains. Under symmetric loading, coalescence of the grains occurs near the top end, and a symmetric grain structure can accelerate this process. The strain distributions in TSVs are calculated, and the eigenstrain projection along the vertical direction can be considered an index to predict the TSV protrusion tendency.Jinxin LiuZhiheng HuangPaul P. ConwayYang LiuIEEEarticleCopperinterconnectionsreliability modelingthrough-silicon viamicrostructureElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 1270-1276 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Copper interconnections reliability modeling through-silicon via microstructure Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Copper interconnections reliability modeling through-silicon via microstructure Electrical engineering. Electronics. Nuclear engineering TK1-9971 Jinxin Liu Zhiheng Huang Paul P. Conway Yang Liu Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
description	A phase-field-crystal model is used to investigate the processing-structure-protrusion relationship of blind Cu through-silicon vias (TSVs) at the atomic scale. A higher temperature results in a larger TSV protrusion. Deformation via dislocation motion dominates at temperatures lower than around 300°C, while both diffusional and dislocation creep occur at temperatures greater than around 300°C. TSVs with smaller sidewall roughness <inline-formula> <tex-math notation="LaTeX">$R_{a}$ </tex-math></inline-formula> and wavelength <inline-formula> <tex-math notation="LaTeX">$\lambda _{a}$ </tex-math></inline-formula> exhibit larger protrusions. Moreover, different protrusion profiles are observed for TSVs with different grain structures. Both protrusions and intrusions are observed when a single grain is placed near the TSV top end, while the top surface protrudes near both edges when it contains more grains. Under symmetric loading, coalescence of the grains occurs near the top end, and a symmetric grain structure can accelerate this process. The strain distributions in TSVs are calculated, and the eigenstrain projection along the vertical direction can be considered an index to predict the TSV protrusion tendency.
format	article
author	Jinxin Liu Zhiheng Huang Paul P. Conway Yang Liu
author_facet	Jinxin Liu Zhiheng Huang Paul P. Conway Yang Liu
author_sort	Jinxin Liu
title	Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
title_short	Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
title_full	Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
title_fullStr	Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
title_full_unstemmed	Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale
title_sort	processing-structure-protrusion relationship of 3-d cu tsvs: control at the atomic scale
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/e9f3d9c867ef430c93bc5047a31fc0f9
work_keys_str_mv	AT jinxinliu processingstructureprotrusionrelationshipof3dcutsvscontrolattheatomicscale AT zhihenghuang processingstructureprotrusionrelationshipof3dcutsvscontrolattheatomicscale AT paulpconway processingstructureprotrusionrelationshipof3dcutsvscontrolattheatomicscale AT yangliu processingstructureprotrusionrelationshipof3dcutsvscontrolattheatomicscale
_version_	1718420702369939456

Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale

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